| PART |
Description |
Maker |
| CM75DU-12F |
Trench Gate Design Dual IGBTMOD75 Amperes/600 Volts 75 A, 600 V, N-CHANNEL IGBT
Trench Gate Design Dual IGBTMOD⑩ 75 Amperes/600 Volts
Trench Gate Design Dual IGBTMOD?/a> 75 Amperes/600 Volts
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| CM100DU-24F CM100DU-24H |
Trench Gate Design Dual IGBTMOD?/a> 100 Amperes/1200 Volts
HIGH POWER SWITCHING USE INSULATED TYPE
Trench Gate Design Dual IGBTMOD⑩ 100 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD 100 Amperes/1200 Volts
|
Mitsubishi Electric Semiconductor
Powerex Power Semiconductors
|
| CM600HA-5F |
Trench Gate Design Single IGBTMOD600 Amperes/250 Volts
Trench Gate Design Single IGBTMOD 600 Amperes/250 Volts
Trench Gate Design Single IGBTMOD⑩ 600 Amperes/250 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| CM400HU-24F |
Trench Gate Design Single IGBTMOD?/a> 400 Amperes/1200 Volts
Trench Gate Design Single IGBTMOD 400 Amperes/1200 Volts
Trench Gate Design Single IGBTMOD⑩ 400 Amperes/1200 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| CM600HU-12F |
Trench Gate Design Single IGBTMOD 600 Amperes/600 Volts
Trench Gate Design Single IGBTMOD⑩ 600 Amperes/600 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| APT25GN120B APT25GN120BG APT25GN120S APT25GN120SG |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: D3 [S]; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 33; 67 A, 1200 V, N-CHANNEL IGBT
Utilizing the latest Field Stop and Trench Gate technologies
|
Microsemi, Corp.
Microsemi Corporation
|
| FS75R07N2E4 FS75R07N2E4-13 |
Dual channel IGBT gate driver
EconoPACK2 Modul mit Trench
|
Infineon Technologies AG
Infineon Technologies A...
|
| HIP6602BCRZ-T HIP6602BCRZA-T HIP6602BCRZA HIP6602B |
FPGA 1600000 SYSTEM GATE 1.8 VOLT - NOT RECOMMENDED for NEW DESIGN
Dual Channel Synchronous Rectified Buck MOSFET Driver 双通道同步整流降压MOSFET驱动
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
http://
|
| HER207 HER204 HER201 HER208G HER201G HER202 HER203 |
10000 GATE 3.3 VOLT LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN
5000 GATE 3.3 VOLT LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN 24高效玻璃钝化二极
24 HIGH EFFICIENCY GPP DIODES
|
Leshan Radio Company, Ltd.
LRC[Leshan Radio Company]
|
| HIP5062DY HIP5062 HIP5062DW |
FPGA 1000000 SYSTEM GATE 1.8 VOLT - NOT RECOMMENDED for NEW DESIGN 10 A DUAL SWITCHING CONTROLLER, 1100 kHz SWITCHING FREQ-MAX, UUC40
Power Control IC Single Chip Dual Switching Power Supply
|
Intersil, Corp.
Intersil Corporation
|
| 74ABT20D-T 74ABT20DB118 |
Dual 4-input NAND gate - Description: Dual 4-Input NAND Gate ; Logic switching levels: TTL ; Number of pins: 14 ; Output drive capability: -15/ 20 mA ; Propagation delay: 2.7 ns; Voltage: 4.5-5.5 V ABT SERIES, DUAL 4-INPUT NAND GATE, PDSO14
|
Ecliptek, Corp.
NXP SEMICONDUCTORS
|
| HA14G HA12G HA18G HA11G HA13G HA15G HA16G HA17G |
2000000 SYSTEM GATE 1.5 VOLT FPGA
100000 SYSTEM GATE 1.8V FPGA - NOT RECOMMENDED for NEW DESIGN
1.0 AMP. GLASS PASSIVATED HIGH EFFICIENCY RECTIFIERS
|
济南固锝电子器件有限公司
JGD[Jinan Gude Electronic Device]
Jinan Gude Electronic Device Co., Ltd.
|
